Hydrogen Passivation of Interstitial Iron in Silicon by Annealing with Pecvd Silicon Nitride Films
نویسندگان
چکیده
This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900C with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700C, where more than 99% of iron was passivated after 30 minutes. Results show that the observed reductions in the interstitial iron concentrations are not likely to be caused by the precipitation of iron at structural defects by a hydrogen-enhanced diffusivity of iron, as has previously been suggested.
منابع مشابه
Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing
متن کامل
On the influence of ICP–PECVD deposition parameters and annealing on the properties of a–Si:H passivation layers
Hydrogenated amorphous silicon (a–Si:H) can be applied as a passivation layer in silicon heterojunction (SHJ) solar cells. In this project, depositions of a–Si:H thin films have been carried out using ICP–PECVD under several deposition conditions. This has been done to gain insight into the deposition process and how the properties of the deposited film can be controlled. To reach this goal, th...
متن کاملEFFECTIVE PASSIVATION OF THE LOW RESISTIVITY SILICON SllRFACE BY A RAPID THERMAL OXIDE/PECVD SILICON NITRIDE STACK AND ITS APPLICATION TO PASSIVATED REAR AND BIFACIAL SI SOLAR CELLS
A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thennal SiO? (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 em/s at the L3 O-cm p-typc (l00) silicon surfaee_ Such low S is achieved by the stack cven when the RTO and SiN films "I<ilvldllally yield considerably poorer surface passivation. Critical to ach...
متن کاملOptimization of PECVD process for ultra-thin tunnel SiOx film as passivation layer for silicon heterojunction solar cells
Ultra-thin silicon oxide (a-SiOx:H) films have been grown by means of plasma enhanced chemical vapor deposition (PECVD) to replace the standard hydrogenated amorphous silicon (a-Si:H) passivation layer for silicon heterojunction solar cells to reduce parasitic absorption. Additionally, silicon oxide surfaces are well known as superior substrates for the nucleation enhancement for nanocrystallin...
متن کاملHydrogenation effect on low temperature internal gettering in multicrystalline silicon
We have performed a comprehensive study into low temperature ( 500 °C) internal gettering in multicrystalline silicon (mc-Si). Two groups of as-grown mc-Si wafers from different ingot height positions were subjected to the same thermal treatments with surface passivation by either silicon nitride (SiNx:H) or a temporary iodine-ethanol (I-E) chemical solution . With either passivation scheme, l...
متن کامل